CURRENT-VOLTAGE CHARACTERISTICS FEATURES OF HETEROSTRUCTURES nGe-p(Ge2)1-x-y(GaAs)х(ZnSe)у

Авторы

  • A.Y. Boboev Andijan State University, Andijan, Uzbekistan, 170100
  • D.P. Abduraximov Andijan State University, Andijan, Uzbekistan, 170100
  • M. Mamirov Andijan State University, Andijan, Uzbekistan, 170100
  • M. Ismatullayeva Andijan State University, Andijan, Uzbekistan, 170100
  • C. Mamadaliyev Andijan State University, Andijan, Uzbekistan, 170100

Аннотация

In this report results of experimental studies of continuous solid solution nGe-p(Ge2)1-x-y(GaAs)х(ZnSe)у grown by liquid phase epitaxy using the technology described in [1] was given. As substrates were used monocrystallne Ge washer with diameter 20 mm, thickness - 350 microns and n-type conductivity. Growth of the epitaxial layer was carried out a limited amount of

Библиографические ссылки

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Загрузки

Опубликован

2023-04-07

Выпуск

Том 2 № 14 (2023): THEORY AND ANALYTICAL ASPECTS OF RECENT RESEARCH

Раздел

Articles